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| RB051L-40 Diodes Schottky barrier diode RB051L-40 Applications High frequency rectification For switching power supply External dimensions (Units : mm) 1.50.2 CATHODE MARK Features 1) Compact power mold type. (PMDS) 2) Ultra low VF. (VF=0.29V Typ. at 1A) 3) VRM=40V guaranteed. 4.50.2 1.20.3 3 1 0.1 +0.02 -0.1 2.00.2 2.60.2 Construction Silicon epitaxial planar ROHM : PMDS EIAJ : - JEDEC : SOD-106 , *****Date of manufacture EX. 1999.129, C Absolute maximum ratings (Ta = 25C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current (60Hz * 1 ) Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg Limits 40 20 3.0 70 125 -40~+125 Unit V V A A C C TL 90C Max. 180 half sine wave when mounted on an alumina substrate (82 x 30 x 1.0 mm) Electrical characteristics (Ta = 25C) Parameter Forward voltage Symbol VF1 VF2 IR1 IR2 Typ. - - - - Max. 0.35 0.45 1.0 150 Unit V V mA A Conditions IF=1.0A IF=3.0A VR=20V VR=15V Reverse current 5.00.3 RB051L-40 Diodes Electrical characteristic curves (Ta = 25C) 10 100m Ta=125C FORWARD CURRENT : IF (A) REVERSE CURRENT : IR (A) 1000 1 10m 75C 1m 100m 5 C TERMINAL CAPACITANCE : CT (pF) 100 C 25 C 12 75 10m -25 C 100 25C Ta= 10 -25C 1m 0 0.1 0.2 0.3 0.4 0.5 1 0 10 20 30 40 50 10 0 5 10 15 20 25 30 35 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics AVERAGE RECTIFIED FORWARD CURRENT : IO (A) AVERAGE RECTIFIED FORWARD CURRENT : IO (A) DC D=0.8 IF IO Tp T D=Tp / T VR=VRM / 2 DC D=0.8 Tp FORWARD POWER DISSIPATION : PF (W) 5.0 5.0 IF IO T 1.4 D=0.8 DC 1.2 D=0.5 4.0 D=0.5 4.0 D=0.5 D=Tp / T VR=VRM / 2 1.0 0.8 0.6 D=0.1 D=0.05 sine D=0.3 D=0.2 3.0 sine D=0.3 D=0.2 3.0 sine wave D=0.3 D=0.2 2.0 D=0.1 2.0 D=0.1 IF 0.4 Tp IO T D=Tp / T Tj=Tj Max. 1.0 D=0.05 1.0 D=0.05 0.2 0 0 0 0 25 50 75 100 125 0 0 25 50 75 100 125 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 AMBIENT TEMPERATURE : Ta (C) LEAD TEMPERATURE : TL (C) AVERAGE RECTIFIED FORWARD CURRENT : IO (A) Fig. 4 Derating curve (IO - Ta) Fig. 5 Derating curve (IO - TL) (When mounted on almina PCBs) Fig. 6 Forward power dissipation characteristics AVERAGE RECTIFIED FORWARD CURRENT : IO (A) REVERSE POWER DISSIPATION : PR (W) 0.50 VR 5.0 DC IF 0.40 Tj=Tj Max. 0 0.30 Tp T Tj=Tj Max. D=Tp / T VR D=0.05 D=0.1 D=0.2 D=0.3 D=0.5 DC D=0.8 IO Tp T D=Tp / T VR=VRM / 2 4.0 D=0.5 3.0 sine D=0.3 D=0.2 0.20 sine 2.0 D=0.1 0.10 D=0.8 1.0 D=0.05 0 0 2 4 6 8 10 12 14 16 18 20 0 0 25 50 75 100 125 REVERSE VOLTAGE : VR (V) AMBIENT TEMPERATURE : Ta (C) Fig. 7 Reverse power dissipation characteristics Fig. 8 Derating curve (when mounted on a glass epoxy PCBs board) |
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